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Bosch Semiconductors for Automotive

Ion Beam Trim and CMP

Ion Beam Trim

Ion Beam Trim allows to reduce the thickness variation of a certain film significantly, for example AlN and Si.

Thickness variation reduction by a factor of >20 is achieved


Requirements

Thin-Film thickness measured over the whole wafer. The number of measured points influence the trimming quality.

IBT
Blue and grey lines reflect the thickness distribution of three wafers before ion beam trim, brown after

Capabilities

  • Planarization of thin films
  • Reduce variations of film thickness, improving the yield
  • Surface roughness reduction / modification to improve adhesion of following depo steps
  • Corrective etching and material modification depending on incoming film parameters
  • State-of-the-art gas cluster ion beam (GCIB)
  • Physical or chemically aided trimming


Materials

  • Si, AlN, W, Ru, SiN, AlScN, and more.

CMP

Tool park including Ebara

Capabilities

  • Oxide
  • Poly-Silicon
  • Tungsten
  • Shallow Trench Isolation
  • Copper
  • Others optional


Clean after process

  • In-situ clean with two clean stations roller brushes and brush pencil and drying
  • NH4OH
  • Megasonic


Other features

  • 4 zones profile setup
  • High selective processes
    - Tungsten vs. Oxide
    - Poly-Si vs. Oxide
    - Si-Nitride vs. Oxide
  • Low and high planarization process for Poly-Silicon
  • Endpoint detection optical, eddy current and motor current