BT1M120
1,200 V Silicon carbide MOSFETs for power conversion
Application & Technical Summary
The BT1M120 family of silicon carbide switches handles voltages up to 1,200 V. The packaged versions are designed for high power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 800 V.
The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.
For bare-die applications such as inverter modules, also non-packaged chip versions are available.
Product benefits
- Available in SMD and THT packages
- Bare-die chips on demand
- Bosch dual channel trench gate technology for lower RDS(on) × A
- Switching speed adjustable with gate resistors
- AEC-Q101 qualified
Efficient and robust
power switches for on-board chargers, DC/DC converters and inverters
Technical Features
| BT1M120 … | ...0025T4A | ...0035T4A | ...0060T4A | ...0025D7A | ...0035D7A | ...0060D7A |
|---|---|---|---|---|---|---|
|
BT1M120 …
RDS(on)
|
...0025T4A
25 mΩ
|
...0035T4A
35 mΩ
|
...0060T4A
60 mΩ
|
...0025D7A
25 mΩ
|
...0035D7A
35 mΩ
|
...0060D7A
60 mΩ
|
|
BT1M120 …
IDS max
|
...0025T4A
75 A
|
...0035T4A
55 A
|
...0060T4A
30 A
|
...0025D7A
75 A
|
...0035D7A
55 A
|
...0060D7A
30 A
|
|
BT1M120 …
Package
|
...0025T4A
TO247-4 (*)
|
...0035T4A
TO247-4 (*)
|
...0060T4A
TO247-4 (*)
|
...0025D7A
TO263-7
|
...0035D7A
TO263-7
|
...0060D7A
TO263-7
|
|
Type
|
TMOS N-channel MOSFET
|
|
VDS
|
1,200 V
|
|
Drive voltage
|
15 – 18 V
|
|
VGS (th)
|
3.5 V
|
|
Features
|
|
|
Miller ratio (QGD/QGS)
|
1
|
|
Tj min [°C]
|
-40 °C
|
|
Tj max [°C]
|
175 °C (200 °C*)
|
-
Package TO263-7
-
Package TO247-4
