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Bosch Semiconductors

BT1M120

1,200 V Silicon carbide MOSFETs for power conversion

Application & Technical Summary

SiC mosfet

The BT1M120 family of silicon carbide switches handles voltages up to 1,200 V. The packaged versions are designed for high power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 800 V.

The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.

For bare-die applications such as inverter modules, also non-packaged chip versions are available.

SiC mosfet, TO247-4

Product benefits

  • Available in SMD and THT packages
  • Bare-die chips on demand
  • Bosch dual channel trench gate technology for lower RDS(on) × A
  • Switching speed adjustable with gate resistors
  • AEC-Q101 qualified

Efficient and robust

power switches for on-board chargers, DC/DC converters and inverters

Technical Features

BT1M120 … ...0025T4A ...0035T4A ...0060T4A ...0025D7A ...0035D7A ...0060D7A
BT1M120 …
RDS(on)
...0025T4A
25 mΩ
...0035T4A
35 mΩ
...0060T4A
60 mΩ
...0025D7A
25 mΩ
...0035D7A
35 mΩ
...0060D7A
60 mΩ
BT1M120 …
IDS max
...0025T4A
75 A
...0035T4A
55 A
...0060T4A
30 A
...0025D7A
75 A
...0035D7A
55 A
...0060D7A
30 A
BT1M120 …
Package
...0025T4A
TO247-4 (*)
...0035T4A
TO247-4 (*)
...0060T4A
TO247-4 (*)
...0025D7A
TO263-7
...0035D7A
TO263-7
...0060D7A
TO263-7
(*) Version without Kelvin source pin available in TO247-3
Type
TMOS N-channel MOSFET
VDS
1,200 V
Drive voltage
15 – 18 V
VGS (th)
3.5 V
Features

  • Kelvin source pin for optimized switching performance
  • High avalanche robustness
  • High oxide reliability

Miller ratio (QGD/QGS)
1
Tj min [°C]
-40 °C
Tj max [°C]
175 °C (200 °C*)
*Extended temperature range, for a limited time only

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