BT1M075 Bare Die

750 V SiC bare die MOSFETs for inverter modules

Application & Technical Summary

The BT1M075 family of silicon carbide switches handles voltages up to 750 V. The bare die versions are designed for high power applications like inverter modules with system voltages around 400 V.

The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.

For applications such as applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles, also packaged versions are available.

Product benefits

Bosch dual channel trench gate technology for lower RDS(on) × A
Switching speed adjustable with gate resistors
Front side metallization option for sintering and soldering
Qualification: Based on AEC-Q101 & SiC specific validation

Efficient and robust

power switches for on-board chargers, DC/DC converters and inverters

Technical features

	BT1M0750007BBA BT1M0750007BOA	BT1M0750010BBA BT1M0750010BOA
RDS(on) @ 50% IDS max.	BT1M0750007BBA BT1M0750007BOA 7 mΩ	BT1M0750010BBA BT1M0750010BOA 10 mΩ
VDS	BT1M0750007BBA BT1M0750007BOA 750 V	BT1M0750010BBA BT1M0750010BOA 750 V
ID max	BT1M0750007BBA BT1M0750007BOA 225 A	BT1M0750010BBA BT1M0750010BOA 165 A
VGS(th) typ.	BT1M0750007BBA BT1M0750007BOA 3.3 V	BT1M0750010BBA BT1M0750010BOA 3.4 V
Package	BT1M0750007BBA BT1M0750007BOA bare die	BT1M0750010BBA BT1M0750010BOA bare die


Type	Silicon carbide trench MOS
Drive voltage	-5 V ... 15 V or 18 V
Miller ratio (QGD/QGS)	<1
Features	Wafer thickness: 180 µm High avalanche robustness High oxide reliability
Front side metallization options	BBA type: AlCu BOA type: AlCu + additional metallization for sintering and soldering
Tj min [°C]	-55 °C
Tj max [°C]	175 °C (200 °C* for t < 100 h)