BT1M075 Bare Die
750 V SiC bare die MOSFETs for inverter modules
The BT1M075 family of silicon carbide switches handles voltages up to 750 V. The bare die versions are designed for high power applications like inverter modules with system voltages around 400 V.
The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.
For applications such as applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles, also packaged versions are available.
Product benefits
- Bosch dual channel trench gate technology for lower RDS(on) × A
- Switching speed adjustable with gate resistors
- Front side metallization option for sintering and soldering
- Qualification: Based on AEC-Q101 & SiC specific validation
Efficient and robust
power switches for on-board chargers, DC/DC converters and inverters
Technical features
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BT1M0750007BBA BT1M0750007BOA |
BT1M0750010BBA BT1M0750010BOA |
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RDS(on) @ 50% IDS max.
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BT1M0750007BBA BT1M0750007BOA
7 mΩ
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BT1M0750010BBA BT1M0750010BOA
10 mΩ
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VDS
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BT1M0750007BBA BT1M0750007BOA
750 V
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BT1M0750010BBA BT1M0750010BOA
750 V
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ID max
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BT1M0750007BBA BT1M0750007BOA
225 A
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BT1M0750010BBA BT1M0750010BOA
165 A
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VGS(th) typ.
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BT1M0750007BBA BT1M0750007BOA
3.3 V
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BT1M0750010BBA BT1M0750010BOA
3.4 V
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Package
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BT1M0750007BBA BT1M0750007BOA
bare die
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BT1M0750010BBA BT1M0750010BOA
bare die
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Type
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Silicon carbide trench MOS
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Drive voltage
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-5 V ... 15 V or 18 V
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Miller ratio (QGD/QGS)
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<1
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Features
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Front side metallization options
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Tj min [°C]
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-40 °C
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Tj max [°C]
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175 °C (200 °C for t < 100 h)
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