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Bosch Semiconductors

BT1M075 Bare Die

750 V SiC bare die MOSFETs for inverter modules

Application & Technical Summary

The BT1M075 family of silicon carbide switches handles voltages up to 750 V. The bare die versions are designed for high power applications like inverter modules with system voltages around 400 V.

The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.

For applications such as applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles, also packaged versions are available.

Product benefits

  • Bosch dual channel trench gate technology for lower RDS(on) × A
  • Switching speed adjustable with gate resistors
  • Front side metallization option for sintering and soldering
  • Qualification: Based on AEC-Q101 & SiC specific validation

Efficient and robust

power switches for on-board chargers, DC/DC converters and inverters

Technical features

BT1M0750007BBA
BT1M0750007BOA
BT1M0750010BBA
BT1M0750010BOA
RDS(on) @ 50% IDS max.
BT1M0750007BBA
BT1M0750007BOA
7 mΩ
BT1M0750010BBA
BT1M0750010BOA
10 mΩ
VDS
BT1M0750007BBA
BT1M0750007BOA
750 V
BT1M0750010BBA
BT1M0750010BOA
750 V
ID max
BT1M0750007BBA
BT1M0750007BOA
225 A
BT1M0750010BBA
BT1M0750010BOA
165 A
VGS(th) typ.
BT1M0750007BBA
BT1M0750007BOA
3.3 V
BT1M0750010BBA
BT1M0750010BOA
3.4 V
Package
BT1M0750007BBA
BT1M0750007BOA
bare die
BT1M0750010BBA
BT1M0750010BOA
bare die
Type
Silicon carbide trench MOS
Drive voltage
-5 V ... 15 V or 18 V
Miller ratio (QGD/QGS)
<1
Features

  • Wafer thickness: 180 µm
  • High avalanche robustness
  • High oxide reliability

Front side metallization options

  • BBA type: AlCu
  • BOA type: AlCu + additional metallization for sintering and soldering

Tj min [°C]
-55 °C
Tj max [°C]
175 °C (200 °C* for t < 100 h)

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