Icon--AD-black-48x48Icon--address-consumer-data-black-48x48Icon--appointment-black-48x48Icon--back-left-black-48x48Icon--calendar-black-48x48Icon--Checkbox-checkIcon--clock-black-48x48Icon--close-black-48x48Icon--compare-black-48x48Icon--confirmation-black-48x48Icon--dealer-details-black-48x48Icon--delete-black-48x48Icon--delivery-black-48x48Icon--down-black-48x48Icon--download-black-48x48Ic-OverlayAlertIcon--externallink-black-48x48Icon-Filledforward-right_adjustedIcon--grid-view-black-48x48Icon--info-i-black-48x48Icon--Less-minimize-black-48x48Icon-FilledIcon--List-Check-blackIcon--List-Cross-blackIcon--list-view-mobile-black-48x48Icon--list-view-black-48x48Icon--More-Maximize-black-48x48Icon--my-product-black-48x48Icon--newsletter-black-48x48Icon--payment-black-48x48Icon--print-black-48x48Icon--promotion-black-48x48Icon--registration-black-48x48Icon--Reset-black-48x48share-circle1Icon--share-black-48x48Icon--shopping-cart-black-48x48Icon--start-play-black-48x48Icon--store-locator-black-48x48Ic-OverlayAlertIcon--summary-black-48x48tumblrIcon-FilledvineIc-OverlayAlertwhishlist
Bosch Semiconductors

BT1M120

1,200 V SiC MOSFETs for power conversion

Application & Technical Summary

SiC mosfet

The BT1M120 family of silicon carbide switches handles voltages up to 1,200 V. The packaged versions are designed for high power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 800 V.

The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.

For bare-die applications such as inverter modules, also non-packaged chip versions are available.

SiC mosfet, TO247-4

Product benefits

  • Available in SMD and THT packages
  • Bosch dual channel trench gate technology for lower RDS(on) × A
  • Switching speed adjustable with gate resistors
  • Qualification: AEC-Q101 & SiC specific validation

Efficient and robust

power switches for on-board chargers, DC/DC converters and inverters

Technical Features

BT1M1200023D7A
BT1M1200023T4A
BT1M1200023T3A
BT1M1200031D7A
BT1M1200031T4A
BT1M1200031T3A
BT1M1200050D7A
BT1M1200050T4A
BT1M1200050T3A
RDS(on) @ 50% IDS max
BT1M1200023D7A
BT1M1200023T4A
BT1M1200023T3A
23 mΩ
BT1M1200031D7A
BT1M1200031T4A
BT1M1200031T3A
31 mΩ
BT1M1200050D7A
BT1M1200050T4A
BT1M1200050T3A
50 mΩ
VDS
BT1M1200023D7A
BT1M1200023T4A
BT1M1200023T3A
1.200 V
BT1M1200031D7A
BT1M1200031T4A
BT1M1200031T3A
1.200 V
BT1M1200050D7A
BT1M1200050T4A
BT1M1200050T3A
1.200 V
ID max
BT1M1200023D7A
BT1M1200023T4A
BT1M1200023T3A
63 A
BT1M1200031D7A
BT1M1200031T4A
BT1M1200031T3A
44 A
BT1M1200050D7A
BT1M1200050T4A
BT1M1200050T3A
29 A
VGS(th) typ.
BT1M1200023D7A
BT1M1200023T4A
BT1M1200023T3A
3.3
BT1M1200031D7A
BT1M1200031T4A
BT1M1200031T3A
3.4
BT1M1200050D7A
BT1M1200050T4A
BT1M1200050T3A
3.6
Type
Silicon carbide trench MOS
Packages
...D7A : TO263-7
...T4A : TO247-4
...T3A : TO247-3
Drive voltage
-5 V ... 15 V or 18 V
Features

  • Kelvin source pin for optimized switching performance (D7A and T4A package only)
  • High avalanche robustness
  • High oxide reliability

Miller ratio (QGD/QGS)
<1
Tj min [°C]
-55 °C
Tj max [°C]
175 °C

Share this on:

Lorem Ipsum

Get in touch with us