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博世半导体

BT1M120

用于功率转换的1200V碳化硅 MOSFET

应用和技术摘要

SiC mosfet

BT1M120系列碳化硅器件阻断电压为1200V。封装版本设计用于具有约800V系统电压的(混动)电动汽车的车载充电器、车载DC-DC转换器以及逆变器等应用。

可靠的MOSFET减少了传导损耗和开关损耗,并支持更高的开关频率。

对于裸片类应用,比如应用于车载逆变器模块,也有非封装芯片版本可用。

产品优势

  • 博世双通道沟槽栅极技术实现单位面积下更低的导通电阻
  • 切换速度可根据门极电阻调节
  • Qualification: AEC-Q101 & SiC specific validation
SiC mosfet, TO247-4

高效而可靠

适用于逆变器、直流转换器和车载充电器等应用

技术特点

BT1M1200023D7A
BT1M1200023T4A
BT1M1200023T3A
BT1M1200031D7A
BT1M1200031T4A
BT1M1200031T3A
BT1M1200050D7A
BT1M1200050T4A
BT1M1200050T3A
RDS(on) @ 50% IDS max
BT1M1200023D7A
BT1M1200023T4A
BT1M1200023T3A
23 mΩ
BT1M1200031D7A
BT1M1200031T4A
BT1M1200031T3A
31 mΩ
BT1M1200050D7A
BT1M1200050T4A
BT1M1200050T3A
50 mΩ
VDS
BT1M1200023D7A
BT1M1200023T4A
BT1M1200023T3A
1.200 V
BT1M1200031D7A
BT1M1200031T4A
BT1M1200031T3A
1.200 V
BT1M1200050D7A
BT1M1200050T4A
BT1M1200050T3A
1.200 V
ID max
BT1M1200023D7A
BT1M1200023T4A
BT1M1200023T3A
63 A
BT1M1200031D7A
BT1M1200031T4A
BT1M1200031T3A
44 A
BT1M1200050D7A
BT1M1200050T4A
BT1M1200050T3A
29 A
VGS(th) typ.
BT1M1200023D7A
BT1M1200023T4A
BT1M1200023T3A
3.3
BT1M1200031D7A
BT1M1200031T4A
BT1M1200031T3A
3.4
BT1M1200050D7A
BT1M1200050T4A
BT1M1200050T3A
3.6

技术特点

Type
Silicon carbide trench MOS
Packages
...D7A : TO263-7
...T4A : TO247-4
...T3A : TO247-3
Drive voltage
-5 V ... 15 V or 18 V
Features
  • Kelvin source pin for optimized switching performance (D7A and T4A package only)
  • High oxide reliability
Miller ratio (QGD/QGS)
<1
Tj min [°C]
-55 °C
Tj max [°C]
175 °C
  • TO263-7, SiC, package
    Package TO263-7
  • TO247-4
    TO247-4
  • TO247-3
    TO247-3

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