BT1M120
用于功率转换的1200V碳化硅 MOSFET
应用和技术摘要
BT1M120系列碳化硅器件阻断电压为1200V。封装版本设计用于具有约800V系统电压的(混动)电动汽车的车载充电器、车载DC-DC转换器以及逆变器等应用。
可靠的MOSFET减少了传导损耗和开关损耗,并支持更高的开关频率。
对于裸片类应用,比如应用于车载逆变器模块,也有非封装芯片版本可用。
产品优势
- 博世双通道沟槽栅极技术实现单位面积下更低的导通电阻
- 切换速度可根据门极电阻调节
- Qualification: AEC-Q101 & SiC specific validation
高效而可靠
适用于逆变器、直流转换器和车载充电器等应用
技术特点
BT1M1200023D7A BT1M1200023T4A BT1M1200023T3A |
BT1M1200031D7A BT1M1200031T4A BT1M1200031T3A |
BT1M1200050D7A BT1M1200050T4A BT1M1200050T3A |
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---|---|---|---|
RDS(on) @ 50% IDS max
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BT1M1200023D7A BT1M1200023T4A BT1M1200023T3A
23 mΩ
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BT1M1200031D7A BT1M1200031T4A BT1M1200031T3A
31 mΩ
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BT1M1200050D7A BT1M1200050T4A BT1M1200050T3A
50 mΩ
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VDS
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BT1M1200023D7A BT1M1200023T4A BT1M1200023T3A
1.200 V
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BT1M1200031D7A BT1M1200031T4A BT1M1200031T3A
1.200 V
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BT1M1200050D7A BT1M1200050T4A BT1M1200050T3A
1.200 V
|
ID max
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BT1M1200023D7A BT1M1200023T4A BT1M1200023T3A
63 A
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BT1M1200031D7A BT1M1200031T4A BT1M1200031T3A
44 A
|
BT1M1200050D7A BT1M1200050T4A BT1M1200050T3A
29 A
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VGS(th) typ.
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BT1M1200023D7A BT1M1200023T4A BT1M1200023T3A
3.3
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BT1M1200031D7A BT1M1200031T4A BT1M1200031T3A
3.4
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BT1M1200050D7A BT1M1200050T4A BT1M1200050T3A
3.6
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技术特点
Type
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Silicon carbide trench MOS
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Packages
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...D7A : TO263-7
...T4A : TO247-4 ...T3A : TO247-3 |
Drive voltage
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-5 V ... 15 V or 18 V
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Features
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Miller ratio (QGD/QGS)
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<1
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Tj min [°C]
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-55 °C
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Tj max [°C]
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175 °C
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