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BT1M120 Bare Die

1,200 V SiC bare die MOSFETs for inverter modules

Application & Technical Summary

The BT1M120 family of silicon carbide switches handles voltages up to 1,200 V. The bare die versions are designed for high power applications like inverter modules with system voltages around 800 V.

The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.

For applications such as applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles, also packaged versions are available.

Product benefits

  • Bosch dual channel trench gate technology for lower RDS(on) × A
  • Switching speed adjustable with gate resistors
  • Front side metallization option for sintering and soldering
  • Qualification: Based on AEC-Q101 & SiC specific validation

高效而可靠

适用于逆变器、直流转换器和车载充电器等应用

技术特点

BT1M1200010BBA
BT1M1200010BOA
BT1M1200013BBA
BT1M1200013BOA
RDS(on) @ 50% IDS max
BT1M1200010BBA
BT1M1200010BOA
10 mΩ
BT1M1200013BBA
BT1M1200013BOA
13 mΩ
VDS
BT1M1200010BBA
BT1M1200010BOA
1.200 V
BT1M1200013BBA
BT1M1200013BOA
1.200 V
ID max
BT1M1200010BBA
BT1M1200010BOA
175 A
BT1M1200013BBA
BT1M1200013BOA
130 A
VGS(th) typ.
BT1M1200010BBA
BT1M1200010BOA
2.9 V
BT1M1200013BBA
BT1M1200013BOA
3.2 V
Package
BT1M1200010BBA
BT1M1200010BOA
bare die
BT1M1200013BBA
BT1M1200013BOA
bare die

技术特点

Type
Silicon carbide trench MOS
Front side metallization options

  • BBA type: AlCu
  • BOA type: AlCu + additional metallization for sintering and soldering

Drive voltage
-5 V ... 15 V or 18 V
Miller ratio (QGD/QGS)
<1
Features

  • Wafer thickness: 180 µm
  • High avalanche robustness
  • High oxide reliability

Tj min [°C]
-55 °C
Tj max [°C]
175 °C (200 °C* for t < 100 h)

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