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BT1M120

用于功率转换的1200V碳化硅 MOSFET

应用和技术摘要

SiC mosfet

BT1M120系列碳化硅器件阻断电压为1200V。封装版本设计用于具有约800V系统电压的(混动)电动汽车的车载充电器、车载DC-DC转换器以及逆变器等应用。

可靠的MOSFET减少了传导损耗和开关损耗,并支持更高的开关频率。

对于裸片类应用,比如应用于车载逆变器模块,也有非封装芯片版本可用。

SiC mosfet, TO247-4

产品优势

  • 提供SMD和THT封装
  • 根据需求提供裸片
  • 博世双通道沟槽栅极技术实现单位面积下更低的导通电阻
  • 切换速度可根据门极电阻调节
  • 符合AEC-Q101 要求

高效而可靠

适用于逆变器、直流转换器和车载充电器等应用

技术特点

BT1M120 … ...0025T4A ...0035T4A ...0060T4A ...0025D7A ...0035D7A ...0060D7A
BT1M120 …
RDS(on)
...0025T4A
25 mΩ
...0035T4A
35 mΩ
...0060T4A
60 mΩ
...0025D7A
25 mΩ
...0035D7A
35 mΩ
...0060D7A
60 mΩ
BT1M120 …
IDS max
...0025T4A
75 A
...0035T4A
55 A
...0060T4A
30 A
...0025D7A
75 A
...0035D7A
55 A
...0060D7A
30 A
BT1M120 …
封装
...0025T4A
TO247-4 (*)
...0035T4A
TO247-4 (*)
...0060T4A
TO247-4 (*)
...0025D7A
TO263-7
...0035D7A
TO263-7
...0060D7A
TO263-7
(*) TO247-3中提供的是不带开尔文源极引脚的版本

技术特点

类型
TMOS多通道MOSFET
VDS
1,200 V
驱动电压
15 – 18 V
VGS (th)
3.5 V
特点

  • 开尔文源极引脚可优化开关性能
  • 高雪崩电压
  • 高氧化层可靠性

米勒系数(QGD/QGS)
1
Tj min [°C]
-40 °C
Tj max [°C]
175 °C (200 °C*)
*扩大温度范围,仅在有限时间内。

Lorem Ipsum

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