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BT1M075

用于功率转换的750V碳化硅MOSFET

应用和技术摘要

SiC mosfet

BT1M075系列碳化硅器件阻断电压为750V。封装版本设计用于具有约400 V系统电压的(混动)电动汽车的车载充电器、车载DC-DC转换器以及逆变器等应用。

可靠的MOSFET减少了传导损耗和开关损耗,并支持更高的开关频率。

对于裸片类应用,比如应用于车载逆变器模块,也有非封装芯片版本可用。

SiC mosfet, TO247-4

产品优势

  • 提供SMD和THT封装
  • 根据需求提供裸片
  • 博世双通道沟槽栅极技术实现单位面积下更低的导通电阻
  • 切换速度可根据门极电阻调节
  • 符合AEC-Q101 要求

高效而可靠

适用于逆变器、直流转换器和车载充电器等应用

技术特点

BT1M075 … ...0020T4A ...0025T4A ...0040T4A ...0020D7A ...0025D7A ...0040D7A
BT1M075 …
RDS(on)
...0020T4A
20 mΩ
...0025T4A
25 mΩ
...0040T4A
40 mΩ
...0020D7A
20 mΩ
...0025D7A
25 mΩ
...0040D7A
40 mΩ
BT1M075 …
IDSmax @ 25°C
...0020T4A
90 A
...0025T4A
60 A
...0040T4A
30 A
...0020D7A
90 A
...0025D7A
60 A
...0040D7A
30 A
BT1M075 …
封装
...0020T4A
TO247-4 (*)
...0025T4A
TO247-4 (*)
...0040T4A
TO247-4 (*)
...0020D7A
TO263-7
...0025D7A
TO263-7
...0040D7A
TO263-7
(*) TO247-3中提供的是不带开尔文源极引脚的版本

技术特点

类型
TMOS多通道MOSFET
VDS
750 V
驱动电压
15 – 18 V
VGS th max @ ID and 25°C
3.5 V
特点

  • 开尔文源极引脚可降低开关损耗
  • 高雪崩电压
  • 高氧化层可靠性

米勒系数 (QGD/QGS)
1
Tj min [°C]
-40 °C
Tj max [°C]
175 °C (200 °C*)
*扩大温度范围, 仅在有限范围内。

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