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BT1M075

用于功率转换的750V碳化硅MOSFET

应用和技术摘要

SiC mosfet

BT1M075系列碳化硅器件阻断电压为750V。封装版本设计用于具有约400 V系统电压的(混动)电动汽车的车载充电器、车载DC-DC转换器以及逆变器等应用。

可靠的MOSFET减少了传导损耗和开关损耗,并支持更高的开关频率。

对于裸片类应用,比如应用于车载逆变器模块,也有非封装芯片版本可用。

SiC mosfet, TO247-4

产品优势

  • 根据需求提供裸片
  • 博世双通道沟槽栅极技术实现单位面积下更低的导通电阻
  • 切换速度可根据门极电阻调节
  • Qualification: AEC-Q101 & SiC specific validation

高效而可靠

适用于逆变器、直流转换器和车载充电器等应用

技术特点

BT1M0750016D7A
BT1M0750016T4A
BT1M0750016T3A
BT1M0750022D7A
BT1M0750022T4A
BT1M0750022T3A
BT1M0750035D7A
BT1M0750035T4A
BT1M0750035T3A
RDS(on) @ 50 % IDS max
BT1M0750016D7A
BT1M0750016T4A
BT1M0750016T3A
16 mΩ
BT1M0750022D7A
BT1M0750022T4A
BT1M0750022T3A
22 mΩ
BT1M0750035D7A
BT1M0750035T4A
BT1M0750035T3A
36 mΩ
VDS
BT1M0750016D7A
BT1M0750016T4A
BT1M0750016T3A
750 V
BT1M0750022D7A
BT1M0750022T4A
BT1M0750022T3A
750 V
BT1M0750035D7A
BT1M0750035T4A
BT1M0750035T3A
750 V
ID max
BT1M0750016D7A
BT1M0750016T4A
BT1M0750016T3A
82 A
BT1M0750022D7A
BT1M0750022T4A
BT1M0750022T3A
59 A
BT1M0750035D7A
BT1M0750035T4A
BT1M0750035T3A
39 A
VGS(th) typ.
BT1M0750016D7A
BT1M0750016T4A
BT1M0750016T3A
3.5
BT1M0750022D7A
BT1M0750022T4A
BT1M0750022T3A
3.5
BT1M0750035D7A
BT1M0750035T4A
BT1M0750035T3A
3.6

技术特点

Type
Silicon carbide trench MOS
Packages
...D7A : TO263-7
...T4A : TO247-4
...T3A : TO247-3
Drive voltage
-5 V ... 15 V or 18 V
Features

  • Kelvin source pin for reduced switching losses (D7A and T4A package only)
  • High avalanche robustness
  • High oxide reliability

Miller ratio (QGD/QGS)
<1
Tj min [°C]
-55 °C
Tj max [°C]
175 °C

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