Silicon carbide (SiC) discrete portfolio 1,200 V from Bosch

Efficient and robust power switches for on-board chargers, DC/DC converters and inverters

The HVCPAK is a top side cooled (TSC) package designed for high-power discrete products, specifically engineered for automotive applications. With its compact footprint of 14 mm x 18.6 mm and an area of approximately 285 mm², the HVCPAK is fully compatible with the HU3PAK standard, making it an ideal choice for modern automotive electronics. Its design enables higher power densities, allowing for more efficient performance in demanding applications.

Additionally, the enhanced cooling capabilities lead to substantial cost savings for cooling systems, while the compact footprint reduces space requirements on printed circuit boards (PCBs), resulting in further cost efficiencies.

The HVCPAK is designed for high power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 800 V.

Benefits

SMD with improved cooling possibility

Bosch dual channel trench gate technology for lower RDS(on) × A

Switching speed adjustable with gate resistors

Target applications

On-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles

Technical features HVCPAK (Top side cooled) – 2nd generation

	BT2M1200025E7A	BT2M1200033E7A	BT2M1200040E7A	BT2M1200060E7A
VDS	BT2M1200025E7A 1,200 V	BT2M1200033E7A 1,200 V	BT2M1200040E7A 1,200 V	BT2M1200060E7A 1,200 V
ID max	BT2M1200025E7A 52 A	BT2M1200033E7A 40 A	BT2M1200040E7A 33 A	BT2M1200060E7A 22 A
RDS(on) @ 50% IDS max	BT2M1200025E7A 25 mΩ	BT2M1200033E7A 33 mΩ	BT2M1200040E7A 40 mΩ	BT2M1200060E7A 60 mΩ
Status	BT2M1200025E7A In development	BT2M1200033E7A In development	BT2M1200040E7A In development	BT2M1200060E7A In development

Technical features HVCPAK (Top side cooled) – 1st generation

	BT1M1200023E7A	BT1M1200031E7A	BT1M1200050E7A
VDS	BT1M1200023E7A 1,200 V	BT1M1200031E7A 1,200 V	BT1M1200050E7A 1,200 V
ID max	BT1M1200023E7A 63 A	BT1M1200031E7A 44 A	BT1M1200050E7A 27,5 A
RDS(on) @ 50% IDS max	BT1M1200023E7A 25 mΩ	BT1M1200031E7A 33 mΩ	BT1M1200050E7A 54 mΩ
Status	BT1M1200023E7A In development	BT1M1200031E7A In development	BT1M1200050E7A In development


Type	Silicon carbide trench MOS
Drive voltage	-5 V ... 15 V or 18 V
Features	Kelvin source pin for optimized switching performance High oxide reliability
Miller ratio (QGD/QGS)	<1
Tj min [°C]	-55 °C
Tj max [°C]	175 °C

Downloads

Article

How Silicon Carbide Semiconductors Are Conquering E-mobility: Semiconductor Digest 10/2024

Silicon carbide (SiC) power semiconductors from Bosch – SiC discretes

Bosch offers a comprehensive portfolio of silicon carbide (SiC) power semiconductors tailored meet the demanding needs of high-power applications. Our range includes bare dies, discretes, and power modules, guaranteeing the ideal solution for any application.

For packaged solutions, our SiC discretes are ideal for applications including on-board chargers, DC/DC converters, and inverters. These packaged versions ensure reliable performance and ease of integration into various power electronics system