Silicon carbide (SiC) bare die portfolio 1,200 V from Bosch

Efficient and robust power switches for inverter modules

Our silicon carbide (SiC) power MOSFETs handle voltages up to 1,200 V.

The bare die versions are designed for high power applications like inverter modules with system voltages around 800 V.

The robust SiC power MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.

For applications such as applications like inverters in (hybrid) electric vehicles, on-board chargers and DC/DC converters, also packaged versions are available.

Benefits

Bosch dual channel trench gate technology for lower RDS(on) × A

Integrated gate resistance for easier paralleling

Front side metallization option for sintering and soldering

Target applications

Inverters in (hybrid) electric vehicles, on-board chargers and DC/DC converters

Technical features – 2nd generation

	BT2M1200009BOA	BT2M1200013BOA	BT2M1200022BBA	BT2M1200008BOA	BT2M1200011BOA	BT2M1200034BBA
VDS	BT2M1200009BOA 1,200 V	BT2M1200013BOA 1,200 V	BT2M1200022BBA 1,200 V	BT2M1200008BOA 1,200 V	BT2M1200011BOA 1,200 V	BT2M1200034BBA 1,200 V
ID max	BT2M1200009BOA 175 A	BT2M1200013BOA 125 A	BT2M1200022BBA 59 A	BT2M1200008BOA 185 A	BT2M1200011BOA 140 A	BT2M1200034BBA 34 A
RDS(on) @ 50% IDS max	BT2M1200009BOA 9 mΩ	BT2M1200013BOA 13 mΩ	BT2M1200022BBA 22 mΩ	BT2M1200008BOA 8 mΩ	BT2M1200011BOA 11 mΩ	BT2M1200034BBA 34 mΩ
Size mm²	BT2M1200009BOA 31	BT2M1200013BOA 23	BT2M1200022BBA 13	BT2M1200008BOA 32	BT2M1200011BOA 25	BT2M1200034BBA 10
Status	BT2M1200009BOA Active	BT2M1200013BOA Active	BT2M1200022BBA Active	BT2M1200008BOA In development	BT2M1200011BOA In development	BT2M1200034BBA In development

Technical features – 1st generation

	BT1M1200023BBA	BT1M1200031BBA	BT1M1200050BBA
VDS	BT1M1200023BBA 1,200 V	BT1M1200031BBA 1,200 V	BT1M1200050BBA 1,200 V
ID max	BT1M1200023BBA 175 A	BT1M1200031BBA 55 A	BT1M1200050BBA 35 A
RDS(on) @ 50% IDS max	BT1M1200023BBA 23 mΩ	BT1M1200031BBA 31 mΩ	BT1M1200050BBA 50 mΩ
Size mm²	BT1M1200023BBA 14	BT1M1200031BBA 11	BT1M1200050BBA 7
Status	BT1M1200023BBA Active	BT1M1200031BBA Active	BT1M1200050BBA Active


Type	Silicon carbide trench MOS
Front side metallization	BOA type: AlCu/Ni/Pd/Au (flash)
Drive voltage	-5 V ... 15 V or 18 V
Miller ratio (QGD/QGS)	<1
Features	Wafer thickness: 180 µm High oxide reliability
Tj min [°C]	-40 °C
Tj max [°C]	175 °C (200 °C for t < 100 h)

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Article

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Silicon carbide (SiC) power semiconductors from Bosch – SiC bare dies

Bosch provides a comprehensive silicon carbide (SiC) power semiconductor portfolio designed to meet the demanding needs of high-power applications. Our offerings include bare dies, discretes, and power modules, ensuring that we have the right solution for every application.

Our SiC bare dies are specifically engineered for use in high power applications such as inverter modules. These bare die versions provide the flexibility and performance required for advanced power management systems.