SiC bare die portfolio 750 V
SiC power MOSFETs for inverter module
The BT2M075 family of silicon carbide switches handles voltages up to 750 V. The bare die versions are designed for high power applications like inverter modules with system voltages around 400 V.
The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.
For applications such as applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles, also packaged versions are available.
Product benefits
- Bosch dual channel trench gate technology for lower RDS(on) × A
- Switching speed adjustable with gate resistors
- Front side metallization for sintering and soldering
- Qualification: Based on AEC-Q101 & SiC specific validation
Efficient and robust
power switches for on-board chargers, DC/DC converters and inverters
Technical features – 2nd generation
| BT2M0750005BOA | BT2M0750006BOA | BT2M0750013BBA | |
|---|---|---|---|
|
VDS
|
BT2M0750005BOA
750 V
|
BT2M0750006BOA
750 V
|
BT2M0750013BBA
750 V
|
|
ID max
|
BT2M0750005BOA
230 A
|
BT2M0750006BOA
200 A
|
BT2M0750013BBA
96 A
|
|
RDS(on) @ 50% IDS max.
|
BT2M0750005BOA
5 mΩ
|
BT2M0750006BOA
6 mΩ
|
BT2M0750013BBA
13 mΩ
|
|
Size²
|
BT2M0750005BOA
31 mm
|
BT2M0750006BOA
27 mm
|
BT2M0750013BBA
14 mm
|
|
Status
|
BT2M0750005BOA
Active
|
BT2M0750006BOA
Active
|
BT2M0750013BBA
Active
|
|
Type
|
Silicon carbide trench MOS
|
|
Drive voltage
|
-5 V ... 15 V or 18 V
|
|
Miller ratio (QGD/QGS)
|
<1
|
|
Features
|
|
|
Front side metallization
|
|
|
Tj min [°C]
|
-40 °C
|
|
Tj max [°C]
|
175 °C (200 °C for t < 100 h)
|