SiC power MOSFETs | SiC discrete portfolio 1,200 V

Bosch’s Discrete SiC-Line (DSL), including our 2nd generation SiC chips, is designed for maximum scalability. These discretes offer great improvements in design to enable enhanced creepage distance & short circuit robustness.

Our DSL utilizes state-of-the-art substrate technology, including AMB (Si3N4) & Ag-sintered die attach, to deliver superior performance.

The package dimensions are designed for compatibility, featuring outlines with an exposed pad on the backside and power and signal connections that align with quasi-standard specifications:

Our signal connectors utilize a common-gate control for easy integration, thanks to selective solder pins with plating. Additionally, our power connectors feature improved welding terminals that reduce module stray inductance and support higher currents.