SiC power MOSFETs | SiC discrete portfolio 1,200 V
QDPAK (Top side cooled)
Benefits
SMD with improved cooling possibility
Bosch dual channel trench gate technology for lower RDS(on) × A
Switching speed adjustable with gate resistors
Target applications
On-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles
Technical features QDPAK (Top side cooled) – 2nd generation
| BT2M1200010Q2A | BT2M1200022Q2A | BT2M1200034Q2A | BT2M1200060Q2A | |
|---|---|---|---|---|
|
VDS
|
BT2M1200010Q2A
1,200 V
|
BT2M1200022Q2A
1,200 V
|
BT2M1200034Q2A
1,200 V
|
BT2M1200060Q2A
1,200 V
|
|
ID max
|
BT2M1200010Q2A
157 A
|
BT2M1200022Q2A
59 A
|
BT2M1200034Q2A
41 A
|
BT2M1200060Q2A
22 A
|
|
RDS(on) @ 50% IDS max
|
BT2M1200010Q2A
11 mΩ
|
BT2M1200022Q2A
25 mΩ
|
BT2M1200034Q2A
36 mΩ
|
BT2M1200060Q2A
60 mΩ
|
|
Status
|
BT2M1200010Q2A
In development
|
BT2M1200022Q2A
In development
|
BT2M1200034Q2A
In development
|
BT2M1200060Q2A
In development
|
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Silicon carbide (SiC) power semiconductors from Bosch – SiC discretes
Bosch offers a comprehensive portfolio of silicon carbide (SiC) power semiconductors tailored meet the demanding needs of high-power applications. Our range includes bare dies, discretes, and power modules, guaranteeing the ideal solution for any application.
For packaged solutions, our SiC discretes are ideal for applications including on-board chargers, DC/DC converters, and inverters. These packaged versions ensure reliable performance and ease of integration into various power electronics system


