SiC power MOSFETs | SiC discrete portfolio 750 V
QDPAK (Top side cooled)
Benefits
SMD with improved cooling possibility
Bosch dual channel trench gate technology for lower RDS(on) × A
Switching speed adjustable with gate resistors
Target applications
On-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles
Technical features QDPAK (Top side cooled) – 2nd generation
| BT2M0750006Q2A | BT2M0750013Q2A | BT2M0750028Q2A | |
|---|---|---|---|
|
VDS
|
BT2M0750006Q2A
750 V
|
BT2M0750013Q2A
750 V
|
BT2M0750028Q2A
750 V
|
|
ID max
|
BT2M0750006Q2A
200 A
|
BT2M0750013Q2A
96 A
|
BT2M0750028Q2A
48 A
|
|
RDS(on) @ 50% IDS max
|
BT2M0750006Q2A
6 mΩ
|
BT2M0750013Q2A
13 mΩ
|
BT2M0750028Q2A
28 mΩ
|
|
Status
|
BT2M0750006Q2A
In development
|
BT2M0750013Q2A
In development
|
BT2M0750028Q2A
In development
|
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Silicon carbide (SiC) power semiconductors from Bosch – SiC discretes
Bosch offers a comprehensive portfolio of silicon carbide (SiC) power semiconductors tailored meet the demanding needs of high-power applications. Our range includes bare dies, discretes, and power modules, guaranteeing the ideal solution for any application.
For packaged solutions, our SiC discretes are ideal for applications including on-board chargers, DC/DC converters, and inverters. These packaged versions ensure reliable performance and ease of integration into various power electronics system


