EG120: Redefining efficiency, safety and reliability in traction inverters
Explore the next generation automotive gate driver IC made by Bosch
Electric drive systems are at the core of every electric vehicle but also come with challenges for manufacturers: high investment costs, complex design requirements, and limited flexibility. The EG120 now offers a new approach. As the first high-voltage gate driver from Bosch, it brings intelligence directly into the traction inverter, the control center of the electric drive system.
With its high level of integration, compliance with ASIL-D safety standards (ISO 26262), and AEC-Q104 certification, the EG120 combines efficiency, reliability, and cost-effectiveness in one compact solution – making electric drive systems simpler, smarter, and more efficient.
If you have not seen yet the real performance of a current driven gate driver for SiC, that can save up to 500 passive components on the inverter level, you have to get the EG120.
Optimized switching control and integrated protection for SiC MOSFET systems
SiC MOSFETs (silicon carbide metal oxide semiconductor field effect transistors) are key components in modern power electronics. They enable fast and efficient switching at high voltages, which is essential for compact and energy efficient electric drive systems. However, their very speed can also create challenges such as voltage spikes, current overshoot, and unwanted oscillations.
The Bosch EG120 programmable gate driver is designed specifically to address these challenges. It provides intelligent control features that optimize the switching behavior of SiC MOSFETs and ensure stable operation under demanding conditions.
Intelligent gate driver for stable, efficient performance
To mitigate voltage overshoot during turn off, the EG120 uses multistage gate current extraction, allowing the MOSFET current to decrease gradually. This minimizes voltage peaks and supports system stability. The integrated Active Miller Clamp (AMCL) prevents unintended switching events by actively holding the gate of the non-conducting MOSFET at a safe voltage level, avoiding false turn-ons.
During turn-on, segmented gate current injection precisely controls the rate of current increase. This prevents reverse surges through the freewheeling diode and results in a smoother current waveform. At the same time, the EG120’s intelligent current shaping suppresses parasitic oscillations and electromagnetic noise. The chip can store and manage up to 133 gate current profiles, allowing fine-tuned operation under varying load and temperature conditions.
This advanced control ensures that SiC MOSFETs operate not only fast but also safely and efficiently. The result is improved system efficiency, reduced heat generation, simplified thermal management, and lower cooling costs. Maintaining optimal operating temperatures also helps slow battery aging, extending the vehicle’s overall service life.
Beyond performance optimization, the EG120 integrates comprehensive protection functions, including over voltage, over current, short circuit, and over temperature monitoring. Its Active Discharge function safely releases excess DC bus energy during fault conditions, protecting both the power stage and the motor. In addition, an integrated freewheeling function provides a low impedance path for inductive currents, reducing voltage spikes and safeguarding the power devices.
By integrating comprehensive functionalities, the EG120 significantly minimizes external circuitry, streamlines production testing, and boosts manufacturing efficiency.
Building the future of electric mobility with the next generation of gate drivers
The Bosch EG120 shows perfectly how our products benefit from our long-standing expertise in automotive electronics. Through its combination of programmable control, functional safety, and system-level integration, the EG120 enables manufacturers to design more efficient, stable, and cost-optimized power systems. With the EG120, Bosch supports the evolution toward smarter, safer, and more efficient electric mobility.
