Bosch at PCIM Europe 2025: spotlight on silicon carbide

Thousands of visitors, hundreds of fascinating discussions, and many interesting insights into trends and challenges – PCIM Europe 2025 is the place to be for everyone interested in power electronics. While the trade show will continue until May 8, our highlight topic has already become clear: silicon carbide and how it will continue to revolutionize the automotive industry, chip by chip.

Silicon carbide – or short, SiC – offers a variety of advantages for electric vehicles, enabling faster switching and higher energy efficiency. But while all chips made from this material can reduce charging times and extend driving ranges, SiC MOSFETs made by Bosch are one of a kind: our latest generation of dual-channel SiC trench MOSFETs utilize a dedicated process and a vertical trench structure to decrease pitch size and increase power density. The result of this dual-channel technology: both high static and dynamic performance without sacrificing reliability or ruggedness for applications with high lifetime demands.

At our booth at PCIM, we are showcasing these dual-channel trench MOSFETs in various packaging options and for a multitude of different applications. Our bare dies with different layouts and sizes allow for maximum flexibility, making them ideal for high power applications like inverter modules. Our discretes, available in various, market-compatible standard packages, are optimized for applications such as DC/DC converters, on-board chargers, or inverters for smaller motors. Additionally, Bosch offers highly efficient power modules based on our SiC MOSFETs.

Also on show at PCIM Europe: our innovative gate drivers, which are available to match the SiC chips. They increase efficiency through intelligent control, thereby extending the range of electric vehicles. Discover the SiC MOSFET gate driver portfolio at our booth. The isolated HV gate driver IC EG120, for example, is designed for automotive traction inverters. It implements capacitive coupling technology to provide galvanic isolation between low and high voltage domains and can be programmed with up to 133 different gate current profiles for charging and discharging of the power transistors. Learn how to increase the driving range with optimized power MOSFET operation performance over lifetime.

You want to learn more about silicon carbide and current developments, but cannot make it to our booth at PCIM? Then we have a great alternative for you: our new white paper on silicon carbide. It guides you through our SiC semiconductor production – from quality assurance in SiC substrates to our special dual-channel SiC trench MOSFETs. It further introduces you to our wide portfolio of SiC solutions and explains how Bosch is paving the way for the future of SiC chips.