AlN (Aluminum nitride)
Aluminum nitride is a piezoelectric material, which is not toxic and which has a limited risk of fab contamination, because aluminum is used for most semiconductors processes. It is stable over time, for temperature treatment up to 1,000° C, plasma treatment, and more.
Therefore it is compatible with typical semiconductor processes and allows a fast and efficient integration into existing industrial manufacturing processes.
Capabilities
- Film thickness up to 3 µm
- AlN Stress tuning from –2,500 to + 400 MPa
- In situ DeGas and soft-etch of wafers available
- Step coverage: Good grow conditions on oxide step
Specifications for standard layer
- Film thickness (all points) for example 1,000 nm: +/- 3% without ion beam trim
- Thickness WIW 1 Sigma: < 2.0%
- Thickness WTW (25 Wafers) 1 Sigma: < 2.0%
- Refractive Index range: 2.15+/- 0.02
- Film stress wafer-in-wafer (15mm EE) range: +/- 75 MPa
- Film stress wafer-to-wafer (25 wafers) mean value range: +/- 25 Mpa
- FWHM of the {002}-AlN orientation in omega scan (XRD measurements): <1.6° on all wafer positions
- Surface Roughness on all wafer positions < 2 nm (RMS) without ion beam trim
- Particles (mechanical adders) <30 @ 0.5 µm
- Plate temperature 50°C – 200°C