5 things every OEM should know about Bosch’s SiC technology

The true value of SiC technology is determined by how well it performs within the vehicle.

Bosch has decades of experience in automotive electronics, power semiconductors, and electrified powertrains. This knowledge extends across the entire value chain: from semiconductor materials and device architecture to power electronics and vehicle applications. The result is a deep understanding of the challenges OEMs are facing when bringing next-generation electric vehicle platforms to market.

This experience is reflected in millions of Bosch’s SiC chips delivered worldwide. It is also reflected in our commitment to continuously industrialize and scale SiC technology for automotive applications, from the introduction of third-generation devices to the transition towards 200 mm wafer manufacturing and expanded global production capabilities.

As demand for SiC grows across a variety of industries, Bosch’s primary focus remains on the automotive sector. For OEMs, this means working with a partner that continues to invest in the technologies, manufacturing capacity, and expertise required for long-term electrification programs.

Innovation only creates value if customers can rely on it.

That is why Bosch approaches SiC development with the same principles that have defined its automotive semiconductor business for decades: uncompromising quality, proven robustness, and long-term reliability. These elements are inseparable from innovation itself.

As a technology and quality leader, Bosch brings a proven zero-failure approach to semiconductor development and manufacturing. This mindset is supported by extensive field experience and a strong track record in demanding automotive applications. The benefits become visible in Bosch’s latest generation of SiC technology, which follows the approach that peak performance requires the highest quality and reliability throughout the lifetime of a vehicle.

Bosch's Gen 3 SiC MOSFETs improve electrical and thermal performance while simultaneously increasing robustness. A reduction in specific on-resistance, higher short-circuit withstand capability, and further improvements in heat dissipation help create devices that balance efficiency and ruggedness in a way that meets the requirements of modern vehicle platforms.

At Bosch, trench technology is the foundation of the entire SiC roadmap.

While planar SiC device concepts have played an important role in the development of the market, Bosch has deliberately chosen a trench-based approach to unlock higher performance, greater power density, and long-term scalability.

The basis for this technology lies in Bosch's decades of experience in highly precise trench etching processes. By creating vertical structures within the SiC material, Bosch can increase channel density and reduce electrical resistance, while continuously evolving device architectures across future generations.

The importance of this approach extends far beyond the current 3rd generation. Bosch's trench technology also serves as the technological foundation for future generations 4 and 5, enabling further improvements in performance, robustness, and cost efficiency.

For OEMs, a semiconductor roadmap provides planning security and enables future performance gains.

Vehicle programs are developed over many years and require technology partners that can support future generations of products and platforms. Bosch addresses this need through a clearly defined SiC technology roadmap with multiple development paths progressing in parallel.

While Gen 3 SiC devices are currently entering the market, work on future generations is already well underway. Bosch expects continued improvements in specific on-resistance, switching performance, robustness, manufacturability, and cost effectiveness across generations 4 and 5.

This long-term development strategy helps ensure that SiC technology can continue moving beyond premium applications and into broader vehicle segments, supporting the next phase of automotive electrification.

To support growing demand, Bosch is expanding its global SiC manufacturing footprint through a dual-fab strategy spanning Reutlingen, Germany, and Roseville, California. Together, these sites create a resilient manufacturing network designed to strengthen supply security while maintaining common technology and quality standards.

This strategy helps Bosch support regional supply chain concepts and provides customers with greater flexibility as global automotive supply chains continue to evolve. At the same time, Bosch supports a wide range of customer integration strategies through a comprehensive SiC portfolio.

Different OEMs and Tier 1 suppliers follow different paths when bringing electrified platforms to market. Some require maximum flexibility at chip level, while others prefer more integrated solutions to simplify development and accelerate time to market. To address these varying requirements, Bosch offers solutions across the entire value chain – from SiC bare dies and discrete devices to SiC power modules. This allows customers to choose the level of integration that best fits their architecture, development strategy, and manufacturing model.

Across the portfolio, customers benefit from the same technological foundation, automotive quality standards, and long-term SiC roadmap. As a result, they gain access to both individual products and a scalable SiC ecosystem that can evolve alongside future vehicle generations.