Optimal application fit: introducing the Gen 3 SiC Ultra Performance Variant

Electric vehicle platforms are evolving across different voltage classes, performance targets, and cost requirements. Battery voltages of 1,000 V and above enable faster charging of large batteries and support demanding, high-power applications. However, they also place greater demands on the overall robustness of power semiconductors. At the same time, many OEMs focus on 800 V to 900 V battery platforms that combine high performance with a balanced system cost profile. In these applications, the main optimization targets for power electronics are efficiency and power density, while maintaining the robustness required for reliable operation.

Application fit is therefore a key performance factor for silicon carbide (SiC) MOSFETs. Rather than designing a single device to fit every application, Bosch develops semiconductor variants for specific operating environments. Its third generation SiC trench technology provides the basis for this approach. The proven vertical trench architecture, with its three-dimensional chip structure, enables multiple optimization paths. With this “best application fit” philosophy, Bosch provides customers with tailored semiconductor solutions that balance efficiency, robustness and cost for the target application.

Semiconductors need to be highly efficient, compact, cost-competitive, and robust. Improving one characteristic affects another, which is why optimization requires finding the best application fit. A key trade-off in silicon carbide semiconductor development is between electrical performance and device robustness level, which has a direct impact on transistor performance. Bosch therefore defined different combinations of robustness features, providing each application with the required robustness for best electrical performance and fit.

The robustness requirements of different applications are strongly affected by the battery voltage level. Bosch’s Generation 3 SiC MOSFET Standard Variant is optimized for battery voltages up to 1,000 V with enough margin for overvoltage due to its rating of 1,350 V. In this application environment, the Standard Variant delivers high efficiency while maintaining large safety margins under demanding operating conditions. High short-circuit capability and strong device robustness are therefore key design priorities.

However, not all electric vehicle platforms operate under these conditions. Many modern electric vehicles feature battery voltages between 800 V and 900 V. The Gen 3 SiC Ultra Performance Variant provides the necessary robustness for this target application, shifting the optimization focus to efficiency and power density.

The Ultra Performance Variant offers advantages that extend beyond the individual chip. Optimization may begin at the semiconductor level, but its impact extends throughout the entire power electronics system.

Thanks to its higher power density, the Ultra Performance Variant allows EV applications, such as traction inverters and on-board chargers, to be designed more compactly. A smaller chip area contributes to lower electrical losses and reduced heat generation during operation. This can reduce cooling requirements and add greater flexibility in system design. These effects contribute to a more favorable system cost profile, making high-performance SiC technology accessible for a broader range of electric vehicle platforms beyond premium applications.

The Ultra Performance Variant is the result of Bosch’s system-level development approach. As both a semiconductor manufacturer and a developer of complete power electronics systems, Bosch combines semiconductor expertise with power electronics system know-how. Rather than developing its SiC technology in isolation, Bosch engages in continuous dialogue with OEMS. This ensures that customer requirements actively shape future SiC generations from an early stage.

Samples of the Gen 3 SiC Standard Variant are currently available. The first samples of the Ultra Performance Variant are planned to follow later in 2026. With its expanding Gen 3 SiC semiconductor portfolio, Bosch demonstrates how application-specific semiconductor engineering can help balance efficiency, performance, robustness, and cost, providing the best fit for different electric vehicle platforms.

• Optimized for the best application fit: Bosch developed the Ultra Performance Variant for electric vehicle applications with 800 V to 900 V battery voltages, such as traction inverters and on-board chargers, prioritizing maximum efficiency, high power density, and optimized system cost.
• 15 percent lower specific on-resistance: Compared with the Gen 3 SiC Standard Variant, the Ultra Performance Variant reduces the specific on-resistance by 15 percent, enabling the same electrical performance with a smaller chip area.
• Higher power density and a more compact design: A smaller chip area at the same performance level supports more compact traction inverter and on-board charger designs and increases packaging flexibility.
• Balanced trade-off and robustness: Bosch optimized the Ultra Performance Variant for maximum electrical performance while maintaining the proven robustness level of Gen 2 SiC technology.
• 200 mm wafer technology: All new SiC generations are manufactured on 200 mm wafers, which increases chip output per wafer and ensures reliable process and product stability.