BT2M075
750 V SiC MOSFETs (Generation 2) for power conversion
应用和技术摘要
BT2M075系列碳化硅器件阻断电压为750V。封装版本设计用于具有约400 V系统电压的(混动)电动汽车的车载充电器、车载DC-DC转换器以及逆变器等应用。
可靠的MOSFET减少了传导损耗和开关损耗,并支持更高的开关频率。
对于裸片类应用,比如应用于车载逆变器模块,也有非封装芯片版本可用。
产品优势
- 根据需求提供裸片
- 博世双通道沟槽栅极技术实现单位面积下更低的导通电阻
- 切换速度可根据门极电阻调节
- Qualification: AEC-Q101 & SiC specific validation
高效而可靠
适用于逆变器、直流转换器和车载充电器等应用
技术特点
Planned packaged products |
BT2M0750013D7A BT2M0750013T4A BT2M0750013T3A |
BT2M0750028D7A BT2M0750028T4A BT2M0750028T3A |
---|---|---|
Planned packaged products
RDS(on) @ 50 % IDS max
|
BT2M0750013D7A BT2M0750013T4A BT2M0750013T3A
13 mΩ
|
BT2M0750028D7A BT2M0750028T4A BT2M0750028T3A
28 mΩ
|
Planned packaged products
VDS
|
BT2M0750013D7A BT2M0750013T4A BT2M0750013T3A
750 V
|
BT2M0750028D7A BT2M0750028T4A BT2M0750028T3A
750 V
|
Planned packaged products
ID max
|
BT2M0750013D7A BT2M0750013T4A BT2M0750013T3A
95 A
|
BT2M0750028D7A BT2M0750028T4A BT2M0750028T3A
48 A
|
Planned packaged products
VGS(th) typ.
|
BT2M0750013D7A BT2M0750013T4A BT2M0750013T3A
3.3
|
BT2M0750028D7A BT2M0750028T4A BT2M0750028T3A
3.6
|
技术特点
Type
|
Silicon carbide trench MOS
|
Packages
|
...D7A : TO263-7
...T4A : TO247-4 ...T3A : TO247-3 |
Drive voltage
|
-5 V ... 15 V or 18 V
|
Features
|
|
Miller ratio (QGD/QGS)
|
<1
|
Tj min [°C]
|
-55 °C
|
Tj max [°C]
|
175 °C
|