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The fact, that MEMS and ASIC products are manufactured partly in the same fab, allows access to the existing ASIC processes, like DUV lithography, phaseshift technology, etc. Therefore i-line and 248 nm KrF are used in mass production for MEMS.

Lithography narrow line


  • Phase shift technology
  • CD down to 130nm line width
  • Organic and anorganic BARC
  • Various resist thickness up to 4µm in MEMS so far, higher possible
  • Frontside-backside alignment
  • Various photosensitive polyimides up to 12µm
  • Mask aligner mit IR alignment und backside alignment