Skip to main content
Bosch semiconductors for Automotive

Advanced packaging

Silicon TSVs

TSVs enable electrical interconnections through several hundred microns.

Bosch offers silicon TSVs. Their advantage is the very low parasitic capacitance and a stress-optimized design enabled by the Bosch airgap technology. These features make them suitable for advanced MEMS applications.

Silicon TSV
Silicon TSV

Silicon TSV capabilities:

  • Low resistance: < 50 Ohm
  • low parasitic capacitance: < 50fF
  • pitch 120-150µm
  • through up to 300 µm of silicon thickness
  • flat MEMS Wafer for standard testability, handling & packaging
  • aluminum top metallization and redistribution layer (RDL) possible
  • oxide and nitride passivation layers possible

Metal TSVs

Metal TSVs are available with low resistance and low parasitic capacitance, limited so far to 50 µm depth:

Wolfram TSV
Wolfram TSV

Metal TSV capabilities:

  • Liner process, hollow Tungsten via. Up to 50 µm depth possible.
  • Resistance < 10 Ohm per contact.
  • Air gap isolation
  • Diameter including air gap isolation about 20 µm