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Bosch semiconductors for Automotive

Ion Beam Trim and CMP

Ion Beam Trim

Ion Beam Trim allows to reduce the thickness variation of a certain film significantly, for example AlN and Si.

Thickness variation reduction by a factor of >20 is achieved


Thin-Film thickness measured over the whole wafer. The number of measured points influence the trimming quality.

Blue and grey lines reflect the thickness distribution of three wafers before ion beam trim, brown after


  • Planarization of thin films
  • Reduce variations of film thickness, improving the yield
  • Surface roughness reduction / modification to improve adhesion of following depo steps
  • Corrective etching and material modification depending on incoming film parameters
  • State-of-the-art gas cluster ion beam (GCIB)
  • Physical or chemically aided trimming


  • Si, AlN, W, Ru, SiN, AlScN, and more.
  • Ion beam trimming - wafer map before
    Ion beam trimming - wafer map before
  • Ion beam trimming - wafer map after
    Ion beam trimming - wafer map after


Tool park including Ebara


  • Oxide
  • Poly-Silicon
  • Tungsten
  • Shallow Trench Isolation
  • Copper
  • Others optional

Clean after process

  • In-situ clean with two clean stations roller brushes and brush pencil and drying
  • NH4OH
  • Megasonic

Other features

  • 4 zones profile setup
  • High selective processes
    - Tungsten vs. Oxide
    - Poly-Si vs. Oxide
    - Si-Nitride vs. Oxide
  • Low and high planarization process for Poly-Silicon
  • Endpoint detection optical, eddy current and motor current