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Bosch semiconductors for Automotive

BT2M075 Bare Die

750 V SiC bare die MOSFETs (Generation 2) for inverter modules

SiC, BareDie, powermodules

The BT2M075 family of silicon carbide switches handles voltages up to 750 V. The bare die versions are designed for high power applications like inverter modules with system voltages around 400 V.

The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.

For applications such as applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles, also packaged versions are available.

Product benefits

  • Bosch dual channel trench gate technology for lower RDS(on) × A
  • Switching speed adjustable with gate resistors
  • Front side metallization for sintering and soldering
  • Qualification: Based on AEC-Q101 & SiC specific validation

Efficient and robust

power switches for on-board chargers, DC/DC converters and inverters

Technical features

BT2M0750005BOA BT2M0750006BOA
RDS(on) @ 50% IDS max.
BT2M0750005BOA
5 mΩ
BT2M0750006BOA
6 mΩ
VDS
BT2M0750005BOA
750 V
BT2M0750006BOA
750 V
ID max
BT2M0750005BOA
230 A
BT2M0750006BOA
200 A
VGS(th) typ.
BT2M0750005BOA
3.3 V
BT2M0750006BOA
3.4 V
Package
BT2M0750005BOA
bare die
BT2M0750006BOA
bare die
Type
Silicon carbide trench MOS
Drive voltage
-5 V ... 15 V or 18 V
Miller ratio (QGD/QGS)
<1
Features
  • Wafer thickness: 180 µm
  • High oxide reliability
Front side metallization
  • BOA type: AlCu + additional metallization for sintering and soldering
Tj min [°C]
-40 °C
Tj max [°C]
175 °C (200 °C for t < 100 h)

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