BT1M120 Bare Die
1,200 V SiC bare die MOSFETs for inverter modules
Application & Technical Summary
The BT1M120 family of silicon carbide switches handles voltages up to 1,200 V. The bare die versions are designed for high power applications like inverter modules with system voltages around 800 V.
The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.
For applications such as applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles, also packaged versions are available.
Product benefits
- Bosch dual channel trench gate technology for lower RDS(on) × A
- Switching speed adjustable with gate resistors
- Front side metallization option for sintering and soldering
- Qualification: Based on AEC-Q101 & SiC specific validation
Efficient and robust
power switches for inverter modules
Technical Features
| BT1M1200010BOA | BT1M1200013BOA | |
|---|---|---|
|
RDS(on) @ 50% IDS max
|
BT1M1200010BOA
10 mΩ
|
BT1M1200013BOA
13 mΩ
|
|
VDS
|
BT1M1200010BOA
1.200 V
|
BT1M1200013BOA
1.200 V
|
|
ID max
|
BT1M1200010BOA
175 A
|
BT1M1200013BOA
130 A
|
|
VGS(th) typ.
|
BT1M1200010BOA
2.9 V
|
BT1M1200013BOA
3.2 V
|
|
Package
|
BT1M1200010BOA
bare die
|
BT1M1200013BOA
bare die
|
|
Type
|
Silicon carbide trench MOS
|
|
Front side metallization
|
|
|
Drive voltage
|
-5 V ... 15 V or 18 V
|
|
Miller ratio (QGD/QGS)
|
<1
|
|
Features
|
|
|
Tj min [°C]
|
-40 °C
|
|
Tj max [°C]
|
175 °C (200 °C for t < 100 h)
|