BT2M075
750 V SiC MOSFETs (Generation 2) for power conversion
Application & Technical Summary
The BT2M075 family of silicon carbide switches handles voltages up to 750 V. The packaged versions are designed for power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 400 V.
The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.
For bare-die applications such as inverter modules, also non-packaged chip versions are available.
Product benefits
- Available in SMD and THT packages
- Bosch dual channel trench gate technology for lower RDS(on) × A
- Switching speed adjustable with gate resistors
- Qualification: AEC-Q101 & SiC specific validation
Efficient and robust
power switches for on-board chargers, DC/DC converters and inverters
Technical features
| Planned packaged products |
BT2M0750013T4A BT2M0750013D7A BT2M0750013E7A |
BT2M0750028T4A BT2M0750028D7A BT2M0750028E7A |
|---|---|---|
|
Planned packaged products
RDS(on) @ 50 % IDS max
|
BT2M0750013T4A BT2M0750013D7A BT2M0750013E7A
13 mΩ
|
BT2M0750028T4A BT2M0750028D7A BT2M0750028E7A
28 mΩ
|
|
Planned packaged products
VDS
|
BT2M0750013T4A BT2M0750013D7A BT2M0750013E7A
750 V
|
BT2M0750028T4A BT2M0750028D7A BT2M0750028E7A
750 V
|
|
Planned packaged products
ID max
|
BT2M0750013T4A BT2M0750013D7A BT2M0750013E7A
60 A
|
BT2M0750028T4A BT2M0750028D7A BT2M0750028E7A
27.5 A
|
|
Type
|
Silicon carbide trench MOS
|
|
Packages
|
...T4A : TO247-4
...D7A : TO263-7 ...E7A : HVCPAK |
|
Drive voltage
|
-5 V ... 15 V or 18 V
|
|
Features
|
|
|
Miller ratio (QGD/QGS)
|
<1
|
|
Tj min [°C]
|
-55 °C
|
|
Tj max [°C]
|
175 °C
|
-
Package TO263-7 -
Package TO247-4
