BT1M120
1,200 V SiC MOSFETs for power conversion
Application & Technical Summary
The BT1M120 family of silicon carbide switches handles voltages up to 1,200 V. The packaged versions are designed for high power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 800 V.
The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.
For bare-die applications such as inverter modules, also non-packaged chip versions are available.
Product benefits
- Available in SMD and THT packages
- Bosch dual channel trench gate technology for lower RDS(on) × A
- Switching speed adjustable with gate resistors
- Qualification: AEC-Q101 & SiC specific validation
Efficient and robust
power switches for on-board chargers, DC/DC converters and inverters
Technical Features
|
BT1M1200023D7A BT1M1200023T4A BT1M1200023T3A |
BT1M1200031D7A BT1M1200031T4A BT1M1200031T3A |
BT1M1200050D7A BT1M1200050T4A BT1M1200050T3A |
|
|---|---|---|---|
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RDS(on) @ 50% IDS max
|
BT1M1200023D7A BT1M1200023T4A BT1M1200023T3A
23 mΩ
|
BT1M1200031D7A BT1M1200031T4A BT1M1200031T3A
31 mΩ
|
BT1M1200050D7A BT1M1200050T4A BT1M1200050T3A
50 mΩ
|
|
VDS
|
BT1M1200023D7A BT1M1200023T4A BT1M1200023T3A
1.200 V
|
BT1M1200031D7A BT1M1200031T4A BT1M1200031T3A
1.200 V
|
BT1M1200050D7A BT1M1200050T4A BT1M1200050T3A
1.200 V
|
|
ID max
|
BT1M1200023D7A BT1M1200023T4A BT1M1200023T3A
63 A
|
BT1M1200031D7A BT1M1200031T4A BT1M1200031T3A
44 A
|
BT1M1200050D7A BT1M1200050T4A BT1M1200050T3A
29 A
|
|
VGS(th) typ.
|
BT1M1200023D7A BT1M1200023T4A BT1M1200023T3A
3.3
|
BT1M1200031D7A BT1M1200031T4A BT1M1200031T3A
3.4
|
BT1M1200050D7A BT1M1200050T4A BT1M1200050T3A
3.6
|
|
Type
|
Silicon carbide trench MOS
|
|
Packages
|
...D7A : TO263-7
...T4A : TO247-4 ...T3A : TO247-3 |
|
Drive voltage
|
-5 V ... 15 V or 18 V
|
|
Features
|
|
|
Miller ratio (QGD/QGS)
|
<1
|
|
Tj min [°C]
|
-55 °C
|
|
Tj max [°C]
|
175 °C
|
-
Package TO263-7 -
TO247-4 -
TO247-3
