BT1M120
1,200 V SiC MOSFETs for power conversion
Application & Technical Summary
The BT1M120 family of silicon carbide switches handles voltages up to 1,200 V. The packaged versions are designed for high power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 800 V.
The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.
For bare-die applications such as inverter modules, also non-packaged chip versions are available.
Product benefits
- Available in SMD and THT packages
- Bosch dual channel trench gate technology for lower RDS(on) × A
- Switching speed adjustable with gate resistors
- Qualification: AEC-Q101 & SiC specific validation
Efficient and robust
power switches for on-board chargers, DC/DC converters and inverters
Technical Features
|
BT1M1200023T4A* BT1M1200023D7A* BT1M1200023E7A* |
BT1M1200031T4A* BT1M1200031D7A* BT1M1200031E7A* |
BT1M1200050T4A* BT1M1200050D7A* BT1M1200050E7A* |
|
|---|---|---|---|
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RDS(on) @ 50% IDS max
|
BT1M1200023T4A* BT1M1200023D7A* BT1M1200023E7A*
23 mΩ
|
BT1M1200031T4A* BT1M1200031D7A* BT1M1200031E7A*
31 mΩ
|
BT1M1200050T4A* BT1M1200050D7A* BT1M1200050E7A*
50 mΩ
|
|
VDS
|
BT1M1200023T4A* BT1M1200023D7A* BT1M1200023E7A*
1.200 V
|
BT1M1200031T4A* BT1M1200031D7A* BT1M1200031E7A*
1.200 V
|
BT1M1200050T4A* BT1M1200050D7A* BT1M1200050E7A*
1.200 V
|
|
ID max
|
BT1M1200023T4A* BT1M1200023D7A* BT1M1200023E7A*
63 A
|
BT1M1200031T4A* BT1M1200031D7A* BT1M1200031E7A*
44 A
|
BT1M1200050T4A* BT1M1200050D7A* BT1M1200050E7A*
29 A
|
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Type
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Silicon carbide trench MOS
|
|
Packages
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...T4A : TO247-4
...D7A : TO263-7 ...E7A : HVCPAK |
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Drive voltage
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-5 V ... 15 V or 18 V
|
|
Features
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|
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Miller ratio (QGD/QGS)
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<1
|
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Tj min [°C]
|
-55 °C
|
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Tj max [°C]
|
175 °C
|
-
Package TO263-7 -
TO247-4
